Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects

A method for forming a semiconductor structure, the method comprising:

• depositing a barrier layer over an insulating layer incorporating magnetic random access memory (MRAM) regions;
• forming magnetic tunnel junction (MTJ) stacks aligned with one or more of the MRAM regions;
• forming a first dielectric layer covering the MTJ stacks;
• forming a second dielectric layer over the first dielectric layer;
• etching the second dielectric layer to form a first set of spacers adjacent the MTJ stacks;
• removing exposed portions of the first dielectric layer to define a second set of L-shaped spacers directly contacting the first set of spacers;
• and
• laterally etching sections of the barrier layer, after first and second spacer formation, to form electrodes directly contacting the MTJ stacks.