Light receiving element and light receiving device

A light receiving device comprising:

• a silicon substrate, and
• a light receiving element electrically connected to the silicon substrate, the light receiving element including:
• a semiconductor substrate formed with a compound semiconductor;
• a semiconductor layer including:
• a first layer that is provided on the semiconductor substrate and is of a first conductivity type;
• a light absorbing layer provided on the first layer;
• a second layer that is provided on the light absorbing layer and is of a second conductivity type;
• and a third layer that is provided on the second layer and is of the second conductivity type, the semiconductor layer forming a plurality of mesas, a terrace, and a groove at a portion of the semiconductor substrate extending from a middle portion thereof toward an outer peripheral portion thereof;
• a first electrode that is provided on at least one of the mesas, and is electrically connected to the third layer;
• a first bump that is provided on the first electrode, and is electrically connected to the first electrode;
• a second electrode that is provided on a portion extending from the terrace to an inner side of the groove, and is electrically connected to the first layer;
• and
• a second bump that has a larger size than the first bump, that is provided on the terrace, and that is electrically connected to the second electrode, wherein
• the mesas and the terrace include the first layer, the light absorbing layer, the second layer, and the third layer,
• the groove extends to the first layer, and
• the second electrode is in contact with the first layer on an inner side of the groove, and wherein
• the first bump and the second bump of the light receiving element electrically connect the light receiving element to the silicon substrate.