Image sensor and electronic device

An electronic device, comprising:

• an image sensor comprising:
• a plurality of photoelectric conversion layers including a plurality of photoelectric conversion units, wherein
• the plurality of photoelectric conversion units is separated in units of pixels,
• wherein the plurality of photoelectric conversion layers comprises a plurality of pixels that is stacked in at least two layers, wherein
• a first pixel of the plurality of pixels, in a first photoelectric conversion layer of the plurality of photoelectric conversion layers, is configured to receive incident light,
• the first photoelectric conversion layer is closer to an optical lens
• a first photoelectric conversion unit of the plurality of photoelectric conversion units, in a second photoelectric conversion layer of the plurality of photoelectric conversion layers, is configured to receive the incident light transmitted through the first photoelectric conversion layer,
• the second photoelectric conversion layer is distant from the optical lens;
• and
• a light-shielding layer configured to shield the light transmitted through the first photoelectric conversion layer, wherein
• the light-shielding layer is between the first photoelectric conversion layer and the second photoelectric conversion layer,
• the light-shielding layer is further configured to transmit the incident light from the first photoelectric conversion layer to the second photoelectric conversion layer through an opening in the light-shielding layer, and
• the opening is asymmetric with respect to the first pixel in the first photoelectric conversion layer.