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US 10,319,762 B2Granted
Backside illuminated CMOS image sensor and method of manufacturing the same
AssigneeDB HiTek Co., Ltd.
InventorChang-Hun Han
Life of this patent
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Abstract
The present invention relates to a backside illuminated CMOS image sensor.
Claims18
A backside illuminated CMOS image sensor, comprising:
- a substrate having a front surface and a rear surface;
- an interlayer dielectric on the rear surface of the substrate and including an insulating layer and a shielding metal layer;
- a color filter part on the interlayer dielectric;
- a lens part on the color filter part;
- and
- a wiring part on the front surface of the substrate,
- wherein the interlayer dielectric comprises:
- a first insulating layer on the rear surface of the substrate;
- a first shielding metal layer on the first insulating layer for partly shielding incident light entering through the color filter part,
- wherein the first shielding metal layer comprises a first sub first shielding metal layer on a pixel region and a first sub second shielding metal layer on a surrounding region,
- a second insulating layer between neighboring first sub first shielding metal layers spaced a distance apart in the pixel region, and
- a second shielding metal layer at one side above the first shielding metal layer.
9 more elements
The backside illuminated CMOS image sensor of 1, wherein the second shielding metal layer is a certain distance apart from an adjacent boundary between the pixel region and the surrounding region.
A backside illuminated CMOS image sensor, comprising:
- a substrate having a front surface and a rear surface;
- an interlayer dielectric formed on the rear surface of the substrate and including an insulating layer and a shielding metal layer;
- a color filter part formed on the interlayer dielectric;
- a lens part formed on the color filter part;
- and
- a wiring part formed on the front surface of the substrate,
- wherein the interlayer dielectric comprises a first insulating layer formed on the rear surface of the substrate;
- a first shielding metal layer stacked on the first insulating layer for partly shielding incident light entering through the color filter part;
- and a second shielding metal layer formed at one side above the first shielding metal layer and having an upper surface and a lower surface formed to slant downward in the surrounding region along a dishing surface of the first shielding metal layer.
6 more elements
A method of manufacturing a backside illuminated CMOS image sensor, comprising:
- a step of forming a first shielding metal layer at a boundary between individual unit pixels and in a surrounding region on a rear surface of a first insulating layer;
- a step of forming a second shielding metal layer on a dishing surface of the first shielding metal layer;
- a step of depositing an upper insulating layer on the first and the second shielding metal layers;
- and
- a step of forming a color filter part and a lens part on the upper insulating layer.
2 more elements
A method for manufacturing a backside illuminated CMOS image sensor, comprising:
- a step of forming a first shielding metal layer on a rear surface of a first insulating layer;
- a step of forming a second shielding metal layer extending on a dishing surface of the first shielding metal layer in a direction of moving away from a pixel region with a substantially uniform thickness and with a downward slope along the dishing surface;
- a step of forming an upper insulating layer on the first and the second shielding metal layers;
- and
- a step of forming a color filter part and a lens part on a fourth insulating layer.
2 more elements
Dependencies are inferred from the claim text.