Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

An imaging device, comprising:

• a pixel portion, including:
• a photoelectric conversion portion disposed in a semiconductor substrate,
• a first film disposed over the photoelectric conversion portion, wherein the first film includes an oxide material,
• a second film disposed on the first film, wherein the second film includes an oxide material,
• a first transistor having a first gate electrode, and
• a first gate insulating film disposed between the first gate electrode and the semiconductor substrate, wherein the first gate insulating film is different from the first film, and
• a logic circuit portion, the logic circuit portion including:
• a second transistor having a second gate electrode, and
• a second gate insulating film disposed between the second gate electrode and the semiconductor substrate,
• wherein,
• the first gate insulating film includes an oxide material, and
• the second gate insulating film includes a nitride material and an oxide material.