Display substrate and manufacturing method thereof, and flexible display device having display substrate

A method for manufacturing a display substrate, the method comprising:

• preparing a base substrate;
• and
• arranging a plurality of thin film transistors and a plurality of insulating layers on the base substrate,
• wherein the plurality of insulating layers are a gate insulating layer, an interlayer insulating layer and a first passivation layer, which are sequentially disposed on the base substrate in the following order:
• the gate insulating layer disposed over the base substrate;
• the interlayer insulating layer disposed over the gate insulating layer;
• and the first passivation layer disposed over the interlayer insulating layer, and
• wherein the method further comprises:
• a step of arranging two stress absorption units on the base substrate and between two adjacent thin film transistors of the plurality of thin film transistors such that the two stress absorption units are disposed in openings formed in the gate insulating layer and the first passivation layer, respectively, and are separated from each other only by the interlayer insulating layer, each of the two stress absorption units being separated from the two adjacent thin film transistors.

A flexible display device, comprising:

• a display substrate, the display substrate comprising:
• a base substrate, and
• a plurality of thin film transistors disposed on the base substrate,
• wherein the display substrate further comprises two stress absorption units disposed on the base substrate and between two adjacent thin film transistors of the plurality of thin film transistors, each of the two stress absorption units being separated from the two adjacent thin film transistors,
• wherein the display substrate further comprises a plurality of insulating layers disposed on the base substrate, the plurality of insulating layers are a gate insulating layer, an interlayer insulating layer and a first passivation layer, which are sequentially disposed on the base substrate in the following order:
• the gate insulating layer disposed over the base substrate;
• the interlayer insulating layer disposed over the gate insulating layer;
• and the first passivation layer disposed over the interlayer insulating layer, and
• wherein the two stress absorption units are disposed in openings formed in the gate insulating layer and the first passivation layer, respectively, and are separated from each other only by the interlayer insulating layer.