Display device with a thin film transistor structure

A display device, comprising:

• a substrate;
• a first metal conductive layer disposed on the substrate;
• a semiconductor layer disposed on the first metal conductive layer and having a top surface;
• and
• a second metal conductive layer disposed on the top surface, wherein the second metal conductive layer comprises a first part and a second part, the first part extends toward the second part, the first part is separated from the second part, and a channel region is defined as a portion of the semiconductor layer corresponding to a gap between the first part and the second part;
• wherein the first part, the second part, the first metal conductive layer, and the channel region form a thin film transistor structure;
• wherein a first extending direction is defined as a direction that the first part extends toward the second part, a second direction is defined as a direction perpendicular to the first extending direction and perpendicular to a normal direction of the substrate, a first region is defined as a region that the first part overlaps the first metal conductive layer, a second region is defined as a region that the first part overlaps the semiconductor layer, the first part has a maximum length in the first region along the first extending direction, the first part has a maximum width in the second region along the second direction, and the maximum length is greater than the maximum width and less than or equal to twice of the maximum width.