Analog circuit and semiconductor device

A semiconductor device comprising:

• a first transistor;
• a second transistor;
• a light emitting element;
• a first wiring;
• and
• a second wiring,
• wherein one of a source and drain of the first transistor is electrically connected to the first wiring,
• wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor,
• wherein one of a source and drain of the second transistor is electrically connected to the light emitting element,
• wherein the other of the source and drain of the second transistor is electrically connected to the second wiring,
• wherein each of the first transistor and the second transistor includes a first gate, a first insulating layer over the first gate, an oxide semiconductor over the first insulating layer, the source and the drain over the oxide semiconductor, a second insulating layer over the source and the drain, and a second gate over the second insulating layer,
• wherein the oxide semiconductor is an intrinsic or substantially intrinsic, and
• wherein in each of the first transistor and the second transistor, a drain current is 1×10−13 A or lower within a gate voltage range of −5 V to −20 V when the drain voltage is 1 V and 10 V.