Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate;
• forming an organic polymer layer on the stack structure;
• forming a photoresist layer comprising silicon on the organic polymer layer;
• exposing and developing the photoresist layer to form a photoresist pattern;
• etching the organic polymer layer using the photoresist pattern as an etch mask to form an organic polymer pattern;
• and
• etching the stack structure using the organic polymer pattern as an etch mask to form a stepwise structure by repeatedly trimming a width of the organic polymer pattern to form the stepwise structure,
• wherein a thickness of the organic polymer layer ranges from 10 times to 30 times a thickness of the photoresist layer,
• wherein the photoresist layer includes a polymer having a unit represented by the following chemical formula 5,
• wherein “R10” represents hydrogen, C1-C10 alkyl group, C1-C10 alkenyl group, C1-C10 alkynyl group, C6-C10 aryl group, adamantyl group, C1-C5 alkyl-adamantyl group, or C2-C6 lactone group, and “t” is an integral number of 1 to 10 and
• wherein the polymer has an average molecular weight of 1,000 to 100,000.

A method for manufacturing a semiconductor device, the method comprising:

• forming an organic polymer layer on an etch target layer disposed on a substrate;
• forming a photoresist layer comprising silicon on the organic polymer layer,
• wherein the photoresist layer comprises a polymer having a unit represented by the following chemical formula 5,
• wherein “R10” represents hydrogen, C1-C10 alkyl group, C1-C10 alkenyl group, C1-C10 alkynyl group, C6-C10 aryl group, adamantyl group, C1-C5 alkyl-adamantyl group, or C2-C6 lactone group, and “t” is an integral number of 1 to 10, and
• wherein the polymer has a weight average molecular weight of 1,000 to 100,000;
• and
• etching the organic polymer layer using the photoresist layer as an etch mask to form an organic polymer pattern;
• and
• etching the etch target layer using the organic polymer pattern as an etch mask to form a stepwise structure by repeatedly trimming a width of the organic polymer pattern to form the stepwise structure.