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US 10,319,729 B2Granted
Methods and apparatuses with vertical strings of memory cells and support circuitry
AssigneeMicron Technology, Inc.
InventorsTakehiro Hasegawa, Koji Sakui
Life of this patent
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Abstract
Apparatuses and methods have been disclosed. One such apparatus includes strings of memory cells formed on a topside of a substrate. Support circuitry is formed on the backside of the substrate and coupled to the strings of memory cells through vertical interconnects in the substrate. The vertical interconnects can be transistors, such as surround substrate transistors and/or surround gate transistors.
Claims15
A method comprising:
- forming openings in a substrate;
- forming electrically conductive material in the openings;
- forming strings of memory cells on a topside of the substrate;
- implanting a plurality of wells in a backside of the substrate;
- implanting a plurality of diffusion regions, to be associated with support circuitry, in each of the plurality of wells;
- and
- forming support circuitry on the backside of the substrate on the plurality of wells and associated with the plurality of diffusion regions, wherein the support circuitry is coupled to the strings of memory cells through the electrically conductive material formed in the openings.
4 more elements
An apparatus comprising:
- a substrate having an opening;
- an electrically insulative material lining the opening;
- an electrically conductive material filling the opening lined with the electrically insulative material;
- and
- a diffusion region in a substantially annular pattern around the opening.
2 more elements
A method comprising:
- forming a plurality of surround gate transistors in a substrate by:
- forming openings through the substrate that couple a first side of the substrate to an opposite side of the substrate;
- lining the openings with an insulative material;
- and
- forming electrically conductive material in the openings;
- forming strings of memory cells on the first side of the substrate;
- and
- forming support circuitry on the opposite of the substrate, wherein the support circuitry is coupled to the strings of memory cells through the surround gate transistors.
5 more elements
Dependencies are inferred from the claim text.