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US 10,319,726 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsIn Cheol Nam, Sung Hee Han, Dae Sun Kim
Life of this patent
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Abstract
A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.
Claims19
A semiconductor device, comprising:
- a substrate including an active region and an element isolation region defining the active region;
- a gate trench extending into the element isolation region and penetrating the active region;
- and
- a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.
1 more element
A semiconductor device, comprising:
- a substrate including an active region and an element isolation region defining the active region;
- a main gate embedded in the active region;
- and
- a field pass gate embedded in the element isolation region,
- wherein each of the main gate and the field pass gate includes a first conductivity-type semiconductor layer, a metal layer, and a second conductivity-type semiconductor layer, sequentially stacked from corresponding lower portions of the main gate and the field pass gate.
2 more elements
A semiconductor device, comprising:
- a substrate including an active region and an element isolation region adjacent to the active region;
- a first gate trench embedded in the active region;
- a second gate trench embedded in the element isolation region,
- wherein each of the first gate trench and the second gate trench includes a gate structure having a multilayer structure in which conductive materials having different work functions are sequentially stacked from corresponding lower portions of the first gate trench and the second gate trench, and
- wherein each of the first gate trench and the second gate trench includes a lowermost first conductivity-type semiconductor layer having a first work function value, an uppermost second conductivity-type semiconductor layer having a second work function value, and a conductive layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer having a third work function value lower than the first work function value and higher than the second work function value.
2 more elements
Dependencies are inferred from the claim text.