Integrated circuit device and method of manufacturing the same

An integrated circuit device comprising:

• a plurality of fin-type active regions extending parallel to each other in a first direction on a substrate;
• an insulating separation structure extending in a second direction that intersects the first direction on the plurality of fin-type active regions;
• a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween, the pair of split gate lines extending in the second direction and aligned with the insulating separation structure;
• a plurality of source/drain regions formed on the plurality of fin-type active regions;
• and
• a jumper contact extending in the first direction between first and second source/drain regions of the plurality of source/drain regions, the first and second source/drain regions being spaced apart from each other with the insulating separation structure therebetween,
• wherein the jumper contact passes over the insulating separation structure to connect the first and second source/drain regions to each other, and
• wherein, in the second direction, the insulating separation structure is located between a first split gate line and a second split gate line of the pair of split gate lines.