Discrete capacitor and manufacturing method thereof
AssigneeRohm Co., Ltd.
InventorHiroki Yamamoto
Life of this patent
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Abstract
A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface portion of the substrate, an oxide film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer, a dielectric film formed on the impurity region having been exposed from the oxide film, and a first electrode opposed to the impurity diffusion layer with the dielectric film therebetween, wherein the impurity concentration on the front surface portion of the impurity diffusion layer is 5×1019 cm−3 or more.
Claims23
A discrete component, comprising:
- a capacitor, including:
- a substrate having a front surface portion;
- an impurity diffusion layer formed on the front surface portion of the substrate;
- an insulating film formed on the impurity diffusion layer and obtained by laminating in the order of a bottom oxide film, a nitride film, and a top oxide film;
- a first electrode formed on the substrate and opposed to the impurity diffusion layer with the insulating film therebetween;
- a first surface insulating film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer;
- and
- a second surface insulating film formed on the substrate and covering the first electrode, the second surface insulating film having a first portion formed on the front surface of the substrate and a second portion formed on a side surface of the substrate, wherein
- the thickness of the bottom oxide film of the insulating film is 110 Å or less, and
- the second portion of the second surface insulating film is thinner than the first portion of the second surface insulating film.
A discrete component, comprising:
- a capacitor, including:
- an n-type semiconductor substrate;
- an insulating film formed on the semiconductor substrate and obtained by laminating in the order of a bottom oxide film, a nitride film, and a top oxide film;
- and
- a first electrode opposed to the semiconductor substrate with the insulating film therebetween;
- a first surface insulating film formed on the semiconductor substrate and having a first opening to selectively expose a portion of the semiconductor substrate;
- and
- a second surface insulating film formed on the semiconductor substrate and covering the first electrode, the second surface insulating film having a first portion formed on a front surface of the semiconductor substrate and a second portion formed on a side surface of the semiconductor substrate, wherein
- the thickness of the bottom oxide film of the insulating film is 110 Å or less, and
- the second portion of the second surface insulating film is thinner than the first portion of the second surface insulating film.
A discrete component, comprising:
- a capacitor, including:
- a substrate having a front surface portion;
- an impurity diffusion layer formed on the front surface portion of the substrate;
- an insulating film formed on the impurity diffusion layer and obtained by laminating in the order of a bottom oxide film, a nitride film, and a top oxide film;
- and
- a first electrode formed on the substrate and opposed to the impurity diffusion layer with the insulating film therebetween;
- a first surface insulating film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer;
- and
- a second surface insulating film formed on the substrate and covering the first electrode, the second surface insulating film having a first portion formed on the front surface of the substrate and a second portion formed on a side surface of the substrate, wherein
- an ESD resistance in a HBM (Human Body Model) test is 700V or more, and
- the second portion of the second surface insulating film is thinner than the first portion of the second surface insulating film.
Dependencies are inferred from the claim text.