Semiconductor devices including separate doped regions

A semiconductor device, comprising:

• a first doped region and a second doped region, the first doped region and the second doped region isolated from direct contact with each other in a first direction;
• a base region and a channel region on the first doped region and the second doped region, respectively, in a second direction, the second direction being substantially perpendicular to the first direction;
• and
• a third doped region and a fourth doped region on the base region and the channel region, respectively, in the second direction,
• wherein each doped region, of the first doped region and the second doped region, includes an edge portion and a center portion, the edge portion of the first doped region extending in the first direction beyond a side surface of the base region and beyond a side surface of the third doped region such that the edge portion of the first doped region is exposed by both the base region and the third doped region, the edge portion of the second doped region extending in the first direction beyond a side surface of the channel region and beyond a side surface of the fourth doped region such that the edge portion of the second doped region is exposed by both the channel region and the fourth doped region, the center portion protruding from the edge portion in the second direction.

A semiconductor device, comprising:

• a substrate, the substrate including a device isolation layer;
• and
• a first semiconductor pattern and a second semiconductor pattern on the substrate, wherein
• the first semiconductor pattern and the second semiconductor pattern are isolated from direct contact with each other in a first direction, such that the device isolation layer is between the first semiconductor pattern and the second semiconductor pattern in the first direction,
• each given semiconductor pattern, of the first semiconductor pattern and the second semiconductor pattern, includes a lower doped region and an upper doped region in lower and upper portions of the given semiconductor pattern, respectively,
• the first semiconductor pattern includes a base region between the upper doped region and the lower doped region of the first semiconductor pattern and a base contact region that is isolated from direct contact with the upper doped region of the first semiconductor pattern in the first direction, the base region and the base contact region are associated with a first conductivity type, and
• the upper doped region and the lower doped region of each given semiconductor pattern are associated with a second conductivity type that is different from the first conductivity type.