US 10,319,713 B2 · Semiconductor devices with electrostatic discharge robustness

Abstract

An embodiment provides a semiconductor device integrated with a switch device and an ESD protection device, having electrostatic discharge robustness. Formed on a semiconductor substrate of a first type is a drain region of a second type opposite to the first type. The switch device has a source region of the second type, formed on the semiconductor substrate and with a first arch portion facing inwardly toward a first direction. The first arch portion partially surrounds the drain region. A control gate of the switch device controls electric connection between the drain region and the source region. The ESD protection device comprises a first region and a second region, both of the first type. The first region adjoins the drain region. The second region has a second arch portion facing inwardly toward a second direction opposite to the first direction, and the second arch portion partially surrounds the first region.

Claims14

Dependent claims

A semiconductor device with electrostatic discharge robustness, comprising:

a semiconductor substrate of a first type;
a switch device, comprising:
a drain region formed on the semiconductor substrate, wherein the drain region is of a second type opposite to the first type;
a source region of the second type, formed on the semiconductor substrate and with a first arch portion facing inwardly toward a first direction, wherein the first arch portion at least partially surrounds the drain region;
and
a control gate, structured to control electric connection between the drain region and the source region;
and
an ESD protection device, comprising:
a first region of the first type formed on the semiconductor substrate;
and
a second region of the first type formed on the semiconductor substrate and with a second arch portion facing inwardly toward a second direction, wherein the second arch portion at least partially surrounds the first region;
wherein the first direction is opposite to the second direction, and the switch device is a depletion-mode junction effect transistor.

9 more elements

Dependencies are inferred from the claim text.

Semiconductor devices with electrostatic discharge robustness

Life of this patent

Semiconductor devices with electrostatic discharge robustness

Life of this patent

Abstract

Claims14