Electronic system having increased coupling by using horizontal and vertical communication channels
AssigneeSTMicroelectronics S.r.l.
InventorAlberto Pagani
Life of this patent
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Abstract
An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.
Claims24
An apparatus, comprising:
- a first integrated circuit die singulated from a wafer and comprising a first semiconductor substrate and a first metallization structure mounted to the first semiconductor substrate, wherein the first metallization structure includes a first contact pad;
- a second integrated circuit die singulated from a wafer and comprising a second semiconductor substrate and a second metallization structure mounted to the second semiconductor substrate, wherein the second metallization structure includes a second contact pad;
- a first dielectric layer disposed in contact with the first metallization structure and a side surface of the first semiconductor substrate, said first dielectric layer including a first communication pad that is electrically connected to said first contact pad;
- a second dielectric layer disposed in contact with the second metallization structure and a side surface of the second semiconductor substrate, said second dielectric layer including a second communication pad that is electrically connected to said second contact pad;
- wherein the first dielectric layer is positioned in physical contact with the second dielectric layer, and
- wherein the first communication pad is positioned for direct mechanical and electrical connection with the second communication pad.
An apparatus, comprising:
- a first integrated circuit die singulated from a wafer and comprising a first semiconductor substrate and a first metallization structure mounted to the first semiconductor substrate, wherein the first metallization structure includes a first contact pad and wherein the first semiconductor substrate includes a first through silicon via having a first end exposed at a bottom surface of the first semiconductor substrate;
- a second integrated circuit die singulated from a wafer and comprising a second semiconductor substrate and a second metallization structure mounted to the second semiconductor substrate, wherein the second metallization structure includes a second contact pad;
- a first dielectric layer disposed in contact with the first metallization structure and a side surface of the first semiconductor substrate, said first dielectric layer including a first communication pad that is electrically connected to said first contact pad;
- a second dielectric layer disposed in contact with the second metallization structure and a side surface of the second semiconductor substrate, said second dielectric layer including a second communication pad that is electrically connected to said second contact pad;
- wherein the second dielectric layer is positioned in physical contact with the bottom surface of the first semiconductor substrate, and
- wherein the second communication pad is positioned for direct mechanical and electrical connection with the end of the first through silicon via.
Dependencies are inferred from the claim text.