Semiconductor module

A semiconductor module comprising:

• a first substrate having a first insulating substrate and a first conductor layer which is formed on at least one surface of the first insulating substrate;
• a power device part having a first electrode on one surface thereof and a second electrode and a gate electrode on the other surface thereof and having the first electrode bonded to the first conductor layer;
• a second substrate having a second insulating substrate and a second conductor layer formed on at least one surface of the second insulating substrate, wherein the second conductor layer has a bonding portion bonded to the second electrode and a surrounding wall portion formed at a position which surrounds the bonding portion as viewed in a plan view in a state where an upper end surface of the surrounding wall portion projects from a bonding surface between the bonding portion and the second electrode, and the second substrate is in contact with the first substrate by way of the surrounding wall portion;
• an inner resin portion made of a resin and disposed in a space defined by the surrounding wall portion and sandwiched between the first insulating substrate and the second insulating substrate;
• a control IC disposed at a position being spaced apart from the power device part;
• and
• an outer resin portion made of a resin and disposed on one surface side of the first substrate so as to cover at least the second substrate and the control IC, wherein
• the power device part is disposed such that the gate electrode is positioned outside a region defined by the surrounding wall portion as viewed in a plan view, and
• the gate electrode is electrically connected to an output terminal of the control IC through a predetermined connecting member.