Bonded 3D integrated circuit (3DIC) structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Chih Chiou, Chung-Shi Liu
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Abstract
An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.
Claims20
A bonded integrated circuit (IC) structure comprising:
- a first IC structure comprising a first bonding layer and a connector;
- and
- a second IC structure bonded to the first IC structure, wherein the second IC structure comprises:
- a second bonding layer over an interconnect layer, the second bonding layer bonded to and contacting the first bonding layer, wherein the connector extends past an interface between the first bonding layer and the second bonding layer;
- and
- a contact pad in the second bonding layer, wherein the contact pad contacts a lateral surface and a sidewall of the connector, wherein the connector is electrically connected to the interconnect layer through the contact pad, wherein a bottom lateral surface of the first bonding layer extends over and is adjacent to a lateral surface of the contact pad.
A bonded integrated circuit (IC) structure comprising:
- a first semiconductor substrate;
- a first bonding layer over the first semiconductor substrate;
- a contact pad in the first bonding layer, the contact pad comprising an outermost surface facing away from the first semiconductor substrate;
- a second bonding layer over and contacting the first bonding layer, wherein a lateral outermost surface of the contact pad is substantially level with an interface between the second bonding layer and the first bonding layer;
- a connector disposed in the first bonding layer and the second bonding layer, wherein the contact pad is disposed on a lateral surface and a sidewall of the connector, wherein a first lateral dimension of the connector within the first bonding layer is larger than a second lateral dimension of the connector within the second bonding layer;
- and
- a second semiconductor substrate over the second bonding layer.
A semiconductor device comprising:
- a first semiconductor substrate;
- first interconnect layers over the first semiconductor substrate, wherein the first interconnect layers comprise a first conductive feature;
- a first bonding layer over the first interconnect layers;
- a contact pad disposed in a first opening in the first bonding layer, wherein the contact pad is confined to the first opening in the first bonding layer, wherein the contact pad comprises:
- a first portion disposed along sidewalls of the first bonding layer;
- and
- a second portion disposed on a top surface of the first conductive feature, wherein a top surface of the second portion of the contact pad is lower than a top surface of the first bonding layer;
- a second bonding layer disposed over the first bonding layer;
- and
- a connector comprising:
- a first portion of the connector bonded to the first portion of the contact pad and to the second portion of the contact pad, wherein a top surface of the first portion of the connector is lower than a top surface of the first portion of the contact pad;
- and
- a second portion of the connector protruding from the first portion and extending through the second bonding layer.
Dependencies are inferred from the claim text.