Micro-pillar assisted semiconductor bonding
AssigneeSkorpios Technologies, Inc.
InventorDamien Lambert
Life of this patent
Estimating the term…
Abstract
Micro pillars are formed in silicon. The micro pillars are used in boding the silicon to hetero-material such as III-V material, ceramics, or metals. In bonding the silicon to the hetero-material, indium is used as a bonding material and attached to the hetero-material. The bonding material is heated and the silicon and the hetero-material are pressed together. As the silicon and the hetero-material are pressed together, the micro pillars puncture the bonding material. In some embodiments, pedestals are used in the silicon as hard stops to align the hetero-material with the silicon.
Claims20
A bonded semiconductor device, the bonded semiconductor device comprising:
- a first semiconductor, the first semiconductor comprising:
- a substrate;
- and
- a plurality of pillars, wherein:
- the plurality of pillars extend from the substrate;
- and
- each pillar of the plurality of pillars comprises:
- a proximal end;
- a distal end, opposite the proximal end, wherein the proximal end is closer to the substrate than the distal end;
- a width equal to or less than 25 microns;
- and
- one or more sides between the proximal end and the distal end;
- a second semiconductor, wherein the second semiconductor comprises material not in the first semiconductor;
- and
- a material, wherein:
- the material fastens the first semiconductor to the second semiconductor;
- the material is a conductor and configured to be an electrical contact between the first semiconductor and the second semiconductor;
- and
- the material surrounds each of the plurality of pillars by contacting the one or more sides of each pillar of the plurality of pillars.
A bonded semiconductor device, the bonded semiconductor device comprising:
- a first semiconductor, the first semiconductor comprising:
- a substrate;
- and
- a plurality of pillars, wherein:
- the plurality of pillars extend from the substrate;
- and
- each pillar of the plurality of pillars comprises:
- a proximal end;
- a distal end, opposite the proximal end, wherein the proximal end is closer to the substrate than the distal end;
- a width equal to or less than 25 microns;
- and
- one or more sides between the proximal end and the distal end;
- a pillar of the plurality of pillars has a first cross section and a second cross section;
- the first cross section is parallel to the second cross section;
- the first cross section is closer to the substrate than the second cross section;
- and
- the first cross section has an area less than the second cross section;
- and
- the area of the second cross section is greater than twice the area of the first cross section;
- a second semiconductor, wherein the second semiconductor comprises material not in the first semiconductor;
- and
- a material, wherein:
- the material fastens the first semiconductor to the second semiconductor;
- and
- the material surrounds each of the plurality of pillars by contacting the one or more sides of each pillar of the plurality of pillars.
A semiconductor structure, the semiconductor structure comprising:
- a substrate;
- a plurality of pillars, wherein:
- the plurality of pillars extend from the substrate to a first height;
- and
- each pillar of the plurality of pillars comprises:
- a proximal end;
- and
- a distal end, opposite the proximal end, wherein the proximal end is closer to the substrate than the distal end;
- a pillar of the plurality of pillars is defined by a first width;
- and
- the first width is equal to or less than 25 microns and the plurality of pillars are configured to puncture an oxide formed on a material, wherein the material is for bonding the semiconductor structure to another semiconductor structure;
- and
- a plurality of pedestals extending from the substrate to a second height, wherein:
- the first height is less than the second height;
- a pedestal of the plurality of pedestals is defined by a second width;
- and
- the second width is greater than the first width.
Dependencies are inferred from the claim text.