Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Ping Chiang, Chao-Wen Shih, Hao-Yi Tsai, Mirng-Ji Lii
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor structure includes: receiving a semiconductive substrate with a post passivation interconnect including an oval landing area; forming a first conductor on the oval landing area; forming a polymer layer above the semiconductive substrate, thereby surrounding a portion of the first conductor; polishing the polymer layer and the first conductor in order to form a planarized surface; and forming a second conductor on the polished first conductor.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a conductive layer and etching the conductive layer to have an oval area on a semiconductive substrate;
- forming a post passivation interconnect (PPI) including an oval landing area on the oval area of the conductive layer;
- forming a first conductor on the oval landing area to form an oval-shape conductor;
- forming a polymer layer above the semiconductive substrate and the PPI to surround an outer surface of the oval-shape conductor;
- polishing the polymer layer and the oval-shape conductor in order to form a planarized surface and expose a polished surface of the oval-shaped conductor;
- and
- forming a second conductor on the polished surface of the oval-shape conductor.
A method for manufacturing a semiconductor structure, comprising:
- receiving a semiconductive substrate with a metal pad thereon;
- depositing a layer on the metal pad and above the semiconductive substrate;
- removing a portion of the layer, thereby forming an oval area;
- electroplating a conductive layer on the layer, thereby forming an oval conductive pad on the oval area;
- forming a first conductor on the oval conductive pad;
- forming a polymer layer over the conductive layer, thereby surrounding a portion of the first conductor;
- partially removing the polymer layer and the first conductor, wherein the first conductor is exposed with an oval-shaped surface;
- and
- disposing a second conductor on the oval-shaped surface of the first conductor.
A method for manufacturing a semiconductor structure, comprising:
- receiving a semiconductive substrate;
- forming a plurality of patterned conductive layers having a plurality of oval areas on the semiconductive substrate respectively;
- disposing a plurality of post passivation interconnects (PPIs) having a plurality of oval conductive pads on the plurality of oval areas of the plurality of patterned conductive layers respectively;
- disposing a polymer layer above the plurality of PPIs and the semiconductive substrate;
- and
- contacting a plurality of conductors with the plurality of PPIs to form a plurality of oval-shape conductors respectively, wherein each of the plurality of oval-shape conductors has a first oval-shape portion and a second oval-shape portion, the first oval-shape is surrounded by the polymer layer, and the second oval-shape portion is protruded from the polymer layer;
- wherein the semiconductive substrate has a geometric center, and a longest axis of each of the plurality of oval-shape conductors is towards the geometric center of the semiconductor substrate.
Dependencies are inferred from the claim text.