Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorMengkai Zhu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a substrate having a first semiconductor layer, an insulating layer, and a second semiconductor layer; an active device on the substrate; an interlayer dielectric (ILD) layer on the active device; a first contact plug adjacent to the active device; and a second contact plug in the ILD layer and electrically connected to the active device. Preferably, the first contact plug includes a first portion in the insulating layer and the second semiconductor layer and a second portion in the ILD layer, in which a width of the second portion is greater than a width of the first portion.
Claims11
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer;
- an active device on the substrate;
- a shallow trench isolation (STI) around the active device;
- an interlayer dielectric (ILD) layer on the active device;
- a first contact plug adjacent to the active device, wherein the first contact plug comprises:
- a first portion in the insulating layer and the STI and contacting the STI directly;
- and
- a second portion in the ILD layer, wherein a width of the second portion is greater than a width of the first portion;
- a second contact plug in the ILD layer and electrically connected to the active device;
- and
- a contact etch stop layer (CESL) on the active device and the substrate, wherein the CESL contacts the first portion and the second portion directly.
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer;
- an active device on the substrate;
- an interlayer dielectric (ILD) layer on the active device;
- a first contact plug adjacent to the active device, wherein the first contact plug comprises:
- a first portion in the insulating layer and the second semiconductor layer;
- and
- a second portion in the ILD layer, wherein a width of the second portion is greater than a width of the first portion;
- a second contact plug in the ILD layer and electrically connected to the active device;
- and
- a contact etch stop layer (CESL) on the active device and the substrate, wherein the CESL not contacting the second portion directly and a bottom surface of the CESL not contacting the second portion directly is even with a bottom surface of the second portion.
Dependencies are inferred from the claim text.