Vertically integrated nanosheet fuse

A method for forming a semiconductor device, the method comprising:

• forming a plurality of nanosheet stacks on a substrate;
• modifying a semiconductor layer of the plurality of nanosheet stacks, wherein modifying the semiconductor layer such that a lateral etch rate of the modified semiconductor layer when exposed to an etchant is greater than a lateral etch rate of unmodified nanosheet layers of the nanosheet stack;
• removing portions of the modified semiconductor layer to form a cavity between an upper and lower nanosheets of each nanosheet stack;
• and
• forming a silicide region in the upper nanosheet of each nanosheet stack.

A semiconductor device comprising:

• a nanosheet stack formed on a substrate, the nanosheet stack comprising a modified semiconductor layer formed on a nanosheet, wherein the modified semiconductor layer comprises a lateral etch rate of the modified semiconductor layer when exposed to an etchant is greater than a lateral etch rate of other unmodified nanosheet layers of the nanosheet stack;
• a silicide layer formed on the substrate and adjacent to the nanosheet stack;
• a first conductive contact formed on a silicide region;
• and
• a second conductive contact formed on a surface of the silicide layer.