Packaged fast inverse diode component for PFC applications

A packaged semiconductor device comprising:

• a first package terminal;
• a die attach tab, wherein the die attach tab is coupled to the first package terminal;
• an N-channel field effect transistor (NFET) die, wherein the NFET die has a topside gate electrode, a topside source electrode, and a bottomside drain electrode, wherein the bottomside drain electrode is mounted to the die attach tab;
• an inverse diode die, wherein the inverse diode die has a topside cathode electrode, a bottomside P type silicon region and a bottomside anode electrode, wherein the bottomside anode electrode is mounted to the die attach tab, wherein the die attach tab electrically couples the bottomside drain electrode of the NFET to the bottomside anode electrode of the inverse diode die;
• a second package terminal that is coupled to the topside gate electrode of the NFET die;
• a third package terminal that is coupled to the topside source electrode of the NFET die;
• a fourth package terminal that is coupled to the topside cathode electrode of the inverse diode die;
• and
• an amount of encapsulant that encapsulates the NFET die and the inverse diode die on the die attach tab portion of the first package terminal and die attach tab.

A packaged semiconductor device comprising:

• a first package terminal;
• a substrate having a conductive surface, wherein the conductive surface is coupled to the first package terminal;
• an N-channel field effect transistor (NFET) die, wherein the NFET die has a topside gate electrode, a topside source electrode, and a bottomside drain electrode,
• wherein the bottomside drain electrode is mounted to the substrate;
• means for conducting a current in a forward voltage condition and for blocking current flow in a reverse voltage condition, wherein the means has a topside metal electrode and a bottomside metal electrode, wherein the bottomside metal electrode is mounted to the substrate, wherein the means is for:
• 1) conducting a forward current with a forward voltage drop of less than 1.5 volts in a 10 ampere forward conduction condition,
• 2) switching from the forward conduction condition to a 100 volt reverse voltage condition without conducting a reverse recovery current of more than 5 amperes,
• 3) withstanding a reverse voltage of at least 550 volts without suffering reverse breakdown, and
• 4) withstanding a 450 volt static reverse blocking condition without conducting a reverse leakage current of more than 100 microamperes;
• a second package terminal that is coupled to the topside gate electrode of the NFET die;
• a third package terminal that is coupled to the topside source electrode of the NFET die;
• a fourth package terminal that is coupled to the topside metal electrode of the means;
• and
• an amount of encapsulant that encapsulates the NFET die and the means on the substrate.