Shorting bar structure and method for manufacturing the same and thin film transistor substrate

Abstract

The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test.

Dependencies are inferred from the claim text.