Method for forming a semiconductor structure containing high mobility semiconductor channel materials

A method of forming a semiconductor structure, the method comprising:

• providing a substrate comprising, from bottom to top, a handle substrate, an insulator layer and a germanium-containing semiconductor material layer;
• forming hard mask material portions having an opening that physically exposes a portion of the germanium-containing semiconductor material layer on the substrate;
• etching through the opening to remove the physically exposed portion of the germanium-containing semiconductor material layer and to provide an undercut region in the germanium-containing semiconductor material layer, the undercut region is located between two remaining portions of the germanium-containing semiconductor material layer;
• growing a III-V compound semiconductor material within the undercut region and laterally outwards from sidewall surfaces of the two remaining portions of the germanium-containing semiconductor material layer, wherein the III-V compound semiconductor material contains defect regions that are present in the undercut region;
• and
• removing portions of the III-V compound semiconductor material including the entirety of each defect containing region to provide III-V compound semiconductor material portions located between the two remaining portions of the germanium-containing semiconductor material layer.