Method for manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMan-Ho Kwan, Fu-Wei Yao, Ru-Yi Su, Chun Lin Tsai, Alexander Kalnitsky
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Abstract
In some embodiments, a semiconductor structure includes a first device and a second device. The first device has a first surface. The first device includes a first active region defined by a first material system. The second device has a second surface. The second surface is coplanar with the first surface. The second device includes a second active region defined by a second material system. The second material system is different from the first material system.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate of a first material system, the substrate having a first device region and a second device region;
- defining an active region only in the first device region, the active region comprising a transistor having a channel;
- and
- forming a layer of a second material system on the substrate, the second material system being different from the first material system;
- and
- defining an isolation region in a portion of the layer over the first device region and at least across an entire width of the first device region by an implantation operation.
A method for manufacturing a semiconductor structure, comprising:
- providing a silicon substrate having a first device region and a second device region;
- defining a first active region only in the first device region, the active region comprising a transistor having a channel;
- forming a III-V layer on the silicon substrate after the defining the first active region, comprising:
- depositing a first bandgap layer over the first device region;
- and
- depositing a second bandgap layer over the first bandgap layer;
- defining an isolation region across an interface of the first bandgap layer and the second bandgap layer by an implantation operation;
- and
- forming an interconnect penetrating through the isolation region.
A method for manufacturing a semiconductor structure, comprising:
- providing a silicon substrate having a first device region and a second device region;
- defining a first active region in the first device region;
- forming a first bandgap layer on the silicon substrate;
- forming a second bandgap layer on the first bandgap layer;
- defining an isolation region across an interface between the first bandgap layer and the second bandgap layer by an ion implantation operation;
- forming an interconnect penetrating through the isolation region;
- patterning a conductive layer directly on a top surface of the second bandgap layer, the conductive layer disposed over the first device region and the second device region after the patterning.
Dependencies are inferred from the claim text.