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US 10,319,636 B2Granted
Deposition and treatment of films for patterning
AssigneeApplied Materials, Inc.
InventorsAtashi Basu, Abhijit Basu Mallick, Ziqing Duan, Srinivas Gandikota
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Abstract
Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.
Claims16
A processing method comprising:
- providing a substrate surface having at least one trench, the at least one trench extending a depth from the substrate surface to a bottom surface, the at least one trench having a width defined by a first sidewall and a second sidewall;
- selectively depositing a film material to form an initial film having a film material volume in the trench and not on the substrate surface, the film material having a Pilling-Bedworth ratio of greater than 2 and comprising a material selected from the group consisting of Cr, Mo and Os;
- and
- treating the initial film to expand the film material volume to provide an expanded film which extends beyond the substrate surface comprises exposing the initial film to a nitridating environment.
1 more element
A processing method comprising:
- providing a substrate surface having at least one trench, the at least one trench extending a depth from the substrate surface to a bottom surface, the at least one trench having a width defined by a first sidewall and a second sidewall;
- selectively depositing a film material to form an initial film having a film material volume in the trench and not on the substrate surface, the film material having a Pilling-Bedworth ratio of greater than 2 and comprising a material selected from the group consisting of Cr, Mo and Os;
- and
- treating the initial film to form a nitride of a metal selected from the group consisting of Cr, Mo and Os to expand the film material volume to provide an expanded film which extends beyond the substrate surface.
1 more element
A processing method comprising:
- providing a substrate surface having at least one trench, the at least one trench extending a depth from the substrate surface to a bottom surface, the at least one trench having a width defined by a first sidewall and a second sidewall;
- selectively depositing a film material to form an initial film having a film material volume in the trench and not on the substrate surface, the film material having a Pilling-Bedworth ratio of greater than 2 and comprising a material selected from the group consisting of Co, Cr, Fe, Mn, Nb, Os, Ta, U, and V;
- and
- treating the initial film at a temperature less than about 400° C. to form a oxide of a metal selected from the group consisting of Co, Cr, Fe, Mn, Nb, Os, Ta, U, or V to expand the film material volume to provide an expanded film which extends beyond the substrate surface.
1 more element
Dependencies are inferred from the claim text.