Interconnect structure containing a metal slilicide hydrogen diffusion barrier and method of making thereof

A semiconductor structure, comprising:

• a semiconductor device located over a substrate;
• a dielectric layer stack of at least one first dielectric material layer, a silicon nitride layer, and at least one second dielectric material layer overlying the semiconductor device;
• interconnect structures comprising metallic lines and metallic vias and embedded within the dielectric layer stack, wherein the interconnect structures comprise a metal silicide portion that directly contacts the silicon nitride layer, and a combination of the silicon nitride layer and the metal silicide portion provides a continuous hydrogen barrier structure that is vertically spaced from the top surface of the semiconductor device;
• and
• a three-dimensional memory device overlying the dielectric layer stack,
• wherein:
• the semiconductor device comprises a driver circuit transistor for the three-dimensional memory device;
• the three-dimensional memory device comprises:
• an alternating stack of insulating layers and electrically conductive word lines;
• and
• memory stack structures comprising a vertical channel and a memory film vertically extending through the alternating stack;
• the silicon nitride layer contacts sidewalls of the metal silicide portion, wherein the sidewalls include a continuous closed periphery;
• and
• the metal silicide portion is an upper portion of a line structure that includes a metal line portion that underlies the metal silicide portion, and the metal silicide portion contacts an overlying via structure.