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US 10,319,626 B1Granted
Interconnects with cuts formed by block patterning
AssigneeGlobalfoundries Inc.
InventorsMinghao Tang, Rui Chen, Yuping Ren
Life of this patent
Estimating the term…
Abstract
Methods of fabricating an interconnect structure. A first sacrificial layer is deposited over a dielectric layer, and a block mask is formed that covers an area on the first sacrificial layer. A second sacrificial layer is deposited over the block mask and the first sacrificial layer. After the block mask is formed, the second sacrificial layer is patterned to form a mandrel that is arranged in part on a portion of the block mask.
Claims19
A method comprising:
- depositing a first sacrificial layer over a dielectric layer;
- forming a first block mask that covers an area on the first sacrificial layer;
- depositing a second sacrificial layer over the first block mask and the first sacrificial layer;
- and
- after the first block mask is formed, patterning the second sacrificial layer to form a first mandrel that is arranged in part on a first portion of the first block mask,
- wherein the first sacrificial layer is deposited on a third sacrificial layer arranged between the first sacrificial layer and the dielectric layer, and further comprising:
- before depositing the first sacrificial layer, forming a second block mask covering an area on the third sacrificial layer.
4 more elements
Dependencies are inferred from the claim text.