Heat treatment method and heat treatment apparatus of light irradiation type
AssigneeSCREEN Holdings Co., Ltd.
InventorAkitsugu Ueda
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AssigneeSCREEN Holdings Co., Ltd.
InventorAkitsugu Ueda
Estimating the term…
An untreated semiconductor wafer is transferred from an indexer unit to a treatment chamber via a first cool chamber and a transfer chamber in this order. A treated semiconductor wafer subjected to heating treatment in the treatment chamber is transferred to the indexer unit via the transfer chamber and the first cool chamber in this order. For a predetermined time after an untreated semiconductor wafer is transferred into the first cool chamber, nitrogen gas is supplied into the first cool chamber at a large supply flow rate and exhausting from the first cool chamber is performed at a large exhaust flow rate. An oxygen concentration in the first cool chamber sharply decreases to enable the semiconductor wafer after the heating treatment to be prevented from being oxidized.
A heat treatment method for irradiating a substrate with light to heat the substrate, the heat treatment method comprising the steps of:
A heat treatment apparatus for irradiating a substrate with light to heat the substrate, the heat treatment apparatus comprising:
Dependencies are inferred from the claim text.