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US 10,319,604 B2Granted
Methods for self-aligned patterning
AssigneeApplied Materials, Inc.
InventorsZiqing Duan, Yihong Chen, Abhijit Basu Mallick, Srinivas Gandikota
Life of this patent
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Abstract
Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.
Claims19
A processing method comprising:
- providing a substrate with a substrate surface having at least one feature extending into the substrate from the substrate surface, the feature having a bottom and sidewalls;
- depositing a first film comprising a metal on the substrate surface so that the first film covers the substrate surface and fills the feature;
- chemically planarizing the substrate surface by sequentially oxidizing a top of the first film to form an oxidized first film on top of the first film and etching the oxidized first film to remove the oxidized first film, the sequential oxidizing and etching repeated to remove the first film from the substrate surface leaving the first film in the feature;
- and
- expanding the first film to grow a first pillar in the feature that extends from the feature orthogonally to the substrate surface.
2 more elements
A processing method comprising:
- providing a substrate with a substrate surface having at least one feature extending into the substrate from the substrate surface, the feature having a bottom and sidewalls;
- depositing a first film comprising a metal on the substrate surface so that the first film covers the substrate surface and fills the feature;
- chemically planarizing the substrate surface by sequentially oxidizing a top of the first film to form an oxidized first film on top of the first film and etching the oxidized first film to remove the oxidized first film, the sequential oxidizing and etching repeated to remove the first film from the substrate surface leaving the first film in the feature;
- and
- expanding the first film to grow a first pillar in the feature that extends from the feature orthogonally to the substrate surface.
2 more elements
A processing method comprising:
- providing a substrate with a substrate surface having at least one feature extending into the substrate from the substrate surface, the feature having a bottom and sidewalls;
- depositing a first film on the substrate surface by sequential exposure to a metal precursor and a reactant to form a first film that covers the substrate surface and fills the feature, the first film comprising tungsten metal and the metal precursor comprising a tungsten halide;
- chemically planarizing the substrate surface by sequentially oxidizing a top of the first film to form an oxidized first film on top of the first film and etching the oxidized first film by exposure to the same tungsten halide compound as the metal precursor to remove the oxidized first film, the sequential oxidizing and etching repeated to remove the first film from the substrate surface leaving the first film in the feature;
- and
- expanding the first film by one or more of oxidizing or nitriding the first film to grow a first pillar in the feature that extends from the feature orthogonally to the substrate surface,
- wherein depositing the first film and chemically planarizing the substrate surface occurs in the same processing chamber.
3 more elements
Dependencies are inferred from the claim text.