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US 10,319,599 B2Granted
Methods of planarizing SiC surfaces
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Helmut Oefner, Roland Rupp
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Abstract
A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate, the sacrificial material having a density between 35% and 120% of the density of the SiC substrate; implanting ions through the sacrificial material and into the roughened surface of the SiC substrate to form an amorphous region in the SiC substrate; and removing the sacrificial material and the amorphous region of the SiC substrate by wet etching.
Claims21
A method of planarizing a roughened surface of a SiC substrate, the method comprising:
- forming a sacrificial material on the roughened surface of the SiC substrate, the sacrificial material having a density between 35% and 120% of the density of the SiC substrate;
- implanting ions through the sacrificial material and into the roughened surface of the SiC substrate to form an amorphous region in the SiC substrate;
- and
- removing the sacrificial material and the amorphous region of the SiC substrate by wet etching.
1 more element
Dependencies are inferred from the claim text.