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US 10,319,598 B2Granted
Method and apparatus for thinning wafer
AssigneeHanwha Precision Machinery Co., Ltd.
InventorSung Wook Kim
Life of this patent
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Abstract
A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer.
Claims4
A method for thinning a wafer, comprising:
- irradiating a line beam focused at a specific depth of a wafer on a surface opposite to a surface on which a circuit is disposed;
- scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer;
- and
- cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.
1 more element
A method for thinning a wafer, comprising:
- irradiating a line beam focused at a specific depth of a wafer;
- scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer;
- and
- cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer,
- wherein the forming of the interface includes:
- adjusting at least one of a scan rate of the line beam or an intensity of the line beam;
- and
- forming grid pattern lines at the specific depth of the wafer.
5 more elements
Dependencies are inferred from the claim text.