Back to results
US 10,319,596 B2Granted
Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Mohit Bajaj, Terence B. Hook, Rajan K. Pandey, Rajesh Sathiyanarayanan
Life of this patent
Estimating the term…
Abstract
A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
Claims20
A method for adjusting a threshold voltage, comprising:
- depositing a strained silicon nitride liner on a gate structure to strain a gate dielectric;
- and
- adjusting threshold voltage of a transistor by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse from the silicon nitride liner into the gate dielectric in a channel region.
A method for adjusting threshold voltage, comprising:
- producing a strain in gate dielectric layers with silicon nitride liners;
- and
- introducing work function (WF) modulating species to the gate dielectric layers and the silicon nitride liners wherein due to the strain in the gate dielectric layers, different amounts of the WF modulating species diffuse to the gate dielectric layers at a channel region, resulting in different threshold voltage values.
A method for adjusting a threshold voltage, comprising:
- depositing a strained liner of a metal nitride over a gate dielectric;
- and
- adjusting threshold voltage by adjusting an amount of strain in the strained liner to control an amount of work function (WF) modulating species including oxygen, OH, or a combination thereof that diffuse into the gate dielectric from the metal nitride of the strained liner.
Dependencies are inferred from the claim text.