Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth

A method of manufacturing an epitaxial wafer having a semiconductor layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer comprising:

• applying terrace processing to an outer peripheral portion of the silicon-based substrate in which a constant width of said portion is removed to a depth below the substrate surface without changing its outer diameter to form a terrace portion having a flat surface,
• making a ground terrace surface of the terrace portion a mirror surface or a quasi-mirror surface, and
• epitaxially growing the semiconductor layer on the silicon-based substrate such that the semiconductor layer at the terrace portion becomes a polycrystal directly on the terrace surface,
• wherein the terrace processing is performed through grinding using a grinding wheel.