Methods comprising an atomic layer deposition sequence

A method comprising the following ALD sequence:

• contacting an outer substrate surface at a temperature T1 with a Si-comprising precursor to form a monolayer comprising Si from the Si-comprising precursor onto the outer substrate surface;
• increasing temperature of the outer substrate surface and the Si-comprising monolayer thereon to a temperature T2 that is at least 200° C. greater than a maximum of the temperature T1, the temperature-increasing being at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the Si-comprising monolayer thereon at least 200° C. above the maximum temperature T1;
• at the temperature T2, contacting the Si-comprising monolayer with an and/or N-comprising precursor that reacts with the Si-comprising monolayer to form a reaction product and a new outer substrate surface that each comprise an insulative material comprising silicon from the monolayer and at least one of O and N from the O and/or N-comprising precursor;
• and
• with the Si-comprising monolayer not having been allowed to be at least 200° C. above the maximum temperature T1 for more than 10 seconds, decreasing temperature of the new outer substrate surface from the temperature T2 to a lower temperature TL that is at least 200° C. lower than a minimum of the temperature T2.

A method comprising the following ALD sequence:

• contacting an outer substrate surface at a temperature T1 with a first precursor to form a monolayer onto the outer substrate surface;
• increasing temperature of the outer substrate surface and the monolayer thereon to a temperature T2 that is at least 200° C. greater than a maximum of the temperature T1, the temperature-increasing being at a temperature-increasing rate that takes no more than 10 seconds to get the outer substrate surface and the monolayer thereon at least 200° C. above the maximum temperature T1;
• at the temperature T2, contacting the monolayer with a second precursor that reacts with the monolayer to form a reaction product and a new outer substrate surface that each comprise a component from the monolayer and a component from the second precursor;
• and
• with the monolayer not having been allowed to be at least 200° C. above the maximum temperature T1 for more than 10 seconds, decreasing temperature of the new outer substrate surface from the temperature T2 to a lower temperature TL that is at least 200° C. lower than a minimum of the temperature T2.