US 10,319,584 B2 · Compositions and processes for depositing carbon-doped silicon-containing films

Abstract

Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Claims4

Dependent claims

A composition for depositing a carbon-doped silicon containing film comprising:

a precursor comprising at least one
organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2,
wherein R8 and R9 are each independently selected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, a C3 to C10 cyclic alkyl group, a linear or branched C2 to C 10 alkenyl group, a linear or branched C2 to C 10 alkynyl group, a C5 to C10 aromatic group, and a C3 to C10 saturated or unsaturated heterocyclic group;
and R10 and R11 are each independently selected from the group consisting of a C1 to C10 linear or branched alkyl group, a C3 to C10 cyclic alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, a C5 to C10 aromatic group, and a C3 to C10 saturated or unsaturated heterocyclic group;
wherein R10 and R11 can form a cyclic ring or an alkyl-substituted cyclic ring;
and L=Cl, Br, I.

3 more elements

Dependencies are inferred from the claim text.

Compositions and processes for depositing carbon-doped silicon-containing films

Life of this patent

Compositions and processes for depositing carbon-doped silicon-containing films

Life of this patent

Abstract

Claims4