Microwave plasma source and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Akira Tanihara, Shigeru Kasai, Nobuhiko Yamamoto
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AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Akira Tanihara, Shigeru Kasai, Nobuhiko Yamamoto
Estimating the term…
A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.
A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, comprising:
A plasma processing apparatus comprising a chamber configured to accommodate a target substrate, a gas supply mechanism configured to supply a gas into the chamber, and a microwave plasma source configured to form a surface wave plasma by radiating a microwave into the chamber, the apparatus configured to perform a plasma process on the target substrate using the surface wave plasma,
Dependencies are inferred from the claim text.