Apparatus for supplying power and apparatus for treating substrate including the same

An apparatus for treating a substrate, the apparatus comprising:

• a chamber having a space for processing the substrate therein;
• a substrate support assembly in the chamber, the substrate support assembly configured to support the substrate;
• a gas supply unit configured to supply a gas into the chamber;
• and
• a power supply configured to supply a high-frequency power such that the gas in the chamber is excited into a plasma state, the power supply including,
• a high-frequency power source configured to provide the high-frequency power,
• a plasma source including first and second antennas, the plasma source configured to generate plasma by using the high-frequency power,
• a power divider connected between the high-frequency power source and the plasma source, the power divider configured to divide the high-frequency power supplied to the first and second antennas, and
• an impedance matching circuit connected between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching,
• wherein the power divider includes,
• a first variable device configured to control the high-frequency power supplied to the first and second antennas, and
• a second variable device configured to compensate for non-linearity of the high-frequency power supplied to the first and second antennas,
• wherein the power divider further includes a pair of reactance devices between the first and second variable devices, and
• wherein the pair of reactance devices are provided to be symmetrical to each other with respect to the impedance matching circuit.

An apparatus for supplying power, the apparatus comprising:

• a high-frequency power source configured to provide a high-frequency power;
• a plasma source including first and second antennas configured to generate plasma by using the high-frequency power;
• a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas;
• and
• an impedance matching circuit between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching,
• wherein the power divider includes a first variable device and a second variable device between the impedance matching circuit and the plasma source in an asymmetrical structure, and
• wherein the power divider further includes at least one reactance device and an entirety of the at least one reactance device is between the first and second variable devices.

An apparatus for treating a substrate, the apparatus comprising:

• a chamber having a space for processing the substrate therein;
• a substrate support assembly in the chamber, the substrate support assembly configured to support the substrate;
• a gas supply unit configured to supply a gas into the chamber;
• and
• a power supply configured to supply a high-frequency power such that the gas in the chamber is excited into a plasma state, the power supply including,
• a high-frequency power source configured to provide the high-frequency power,
• a plasma source including first and second antennas configured to generate plasma by using the high-frequency power,
• a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas, and
• an impedance matching circuit between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching,
• wherein the power divider includes a first variable device and a second variable device between the impedance matching circuit and the plasma source in an asymmetrical structure, and
• wherein the power divider further includes at least one reactance device and an entirety of the at least one reactance device is between the first and second variable devices.