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US 10,319,460 B2Granted
Systems and methods utilizing a flexible read reference for a dynamic read window
AssigneeInfineon Technologies AG
InventorsThomas Kern, Jens Rosenbusch, Ulrich Backhausen, Thomas Nirschl
Life of this patent
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Abstract
A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.
Claims17
A memory system utilizing a flexible read reference, the system comprising:
- a memory partition having a plurality of memory cells, wherein each cell has a cell state voltage based on a read operation;
- a failcount component configured to generate failcounts in response to read operations of the memory partition, where the failcounts indicate a number of the memory cells having failed reads;
- and
- a controller configured to generate a calibrated reference value for read operations of the memory partition by utilizing the failcounts from the failcount component, wherein the controller is configured to generate the calibrated reference value by sequentially reducing a modified reference value until the failcount exceeds a fail limit to obtain the calibrated reference value, wherein the modified reference value starts at an initial value, wherein the calibrated reference value is compared with a cell state voltage to determine a cell state.
1 more element
A method of calibrating a memory system, the method comprising:
- setting a reference value to an initial value;
- sequentially decreasing the reference value by a step amount until a limit is exceeded, wherein the limit includes a step limit and a fail limit;
- providing the reference value as a calibrated reference value;
- and
- performing one or more read operations to determine a cell state by comparing a read cell state voltage with the calibrated reference value.
2 more elements
Dependencies are inferred from the claim text.