Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
AssigneeMicron Technology, Inc.
InventorsAlbert Liao, Wayne I. Kinney, Yi Fang Lee, Manzar Siddik
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Abstract
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.
Claims22
A semiconductor structure, comprising:
- an electrode;
- another electrode;
- and
- a ferroelectric material between the electrode and the another electrode and comprising an oxide of at least one of hafnium and zirconium, the oxide doped with bismuth, wherein the ferroelectric material further comprises magnesium and comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium.
A semiconductor device, comprising:
- an array of memory cells, each memory cell of the array of memory cells comprising a capacitor coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
- a first electrode and a second electrode;
- and
- a ferroelectric material between the first electrode and the second electrode, the ferroelectric material comprising:
- hafnium oxide, zirconium oxide, or a combination thereof;
- bismuth;
- and
- magnesium,
- wherein the ferroelectric material comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium.
A method of forming a semiconductor structure, the method comprising:
- forming an electrode;
- forming a ferroelectric material comprising bismuth, magnesium, and at least one of hafnium oxide and zirconium oxide over the electrode, wherein the ferroelectric material comprises between about 0.3 part and about 10.0 part bismuth and magnesium for every about 100 parts of hafnium and zirconium;
- and
- forming another electrode over the ferroelectric material.
An electronic system, comprising:
- a processor;
- a memory array operably coupled to the processor, the memory array comprising memory cells, each memory cell of the array of memory cells comprising a capacitor operably coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
- a first electrode;
- a ferroelectric material adjacent to the first electrode and comprising:
- hafnium oxide, zirconium oxide, or a combination thereof;
- bismuth;
- and
- magnesium, wherein the ferroelectric material comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium;
- and
- a second electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode;
- and
- a power supply in operable communication with the processor.
Dependencies are inferred from the claim text.