Adjustable current selectors

A memory device, comprising:

• a magnetic memory component;
• a current selector component coupled to the magnetic memory component, the current selector component comprising:
• a first transistor having a first gate with a corresponding first threshold voltage, wherein the first transistor comprises a charge storage layer configured to selectively store charge so as to adjust a current through the first transistor;
• and
• a second transistor coupled in parallel with the first transistor, the second transistor having a second gate with a corresponding second threshold voltage, distinct from the first threshold voltage;
• and
• control circuitry configured to:
• determine a bit error rate of the magnetic memory component;
• and
• adjust a charge stored in the charge storage layer based on the determined bit error rate.