Method for patterning a sequence of layers and semiconductor laser device
AssigneeOSRAM Opto Semiconductors GmbH
InventorsChristian Rumbolz, Sven Gerhard
Life of this patent
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Abstract
A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.
Claims12
A method for patterning a sequence of layers comprising:
- providing the sequence of layers, wherein the sequence of layers comprises a first layer and a second layer, which differ from one another in terms of their material composition;
- applying a first mask on a top surface of the first layer facing away from the second layer;
- partially removing the first layer in an area of the sequence of layers not covered by the first mask and partially exposing the second layer by a first plasma etching method;
- and
- at least partially removing the exposed second layer by a second plasma etching method,
- wherein the first layer is removed faster or greater by the first plasma etching method with a diminishing distance in a direction lateral to the first mask,
- wherein the first layer is removed at a lower etch rate than the second layer during the second plasma etching method,
- wherein at least one trench is created in the sequence of layers, wherein the at least one trench extends completely through the first layer and only partly into the second layer, and wherein a bottom surface of the at least one trench is formed by a part of the second layer.
A method for patterning a sequence of layers comprising:
- providing the sequence of layers, wherein the sequence of layers comprises a first layer and a second layer, which differ from one another in terms of their material composition;
- applying a first mask on a top surface of the first layer facing away from the second layer;
- partially removing the first layer in an area of the sequence of layers not covered by the first mask and partially exposing the second layer by a first plasma etching method;
- at least partially removing the exposed second layer by a second plasma etching method;
- and
- after performing the first plasma etching method and before performing the second plasma etching method, applying a second mask on the top surface of the first layer facing away from the second layer, wherein a position of the second mask is at most partially congruent with a position of the first mask, wherein the first plasma etching method is performed again,
- wherein the first layer is removed faster or greater by the first plasma etching method with a diminishing distance in a direction lateral to the first mask,
- wherein the first layer is removed at a lower etch rate than the second layer during the second plasma etching method,
- wherein at least one trench is created in the sequence of layers, and wherein the at least one trench extends completely through the first layer and at least partially through the second layer.
Dependencies are inferred from the claim text.