III-V chip preparation and integration in silicon photonics
AssigneeSkorpios Technologies, Inc.
InventorDamien Lambert
Life of this patent
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Abstract
A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.
Claims15
A method for creating a composite semiconductor laser by bonding a gain chip to a silicon device, the method comprising:
- applying an adhesive to a transfer substrate to form a transfer wafer;
- securing a device wafer to the transfer wafer by contacting the device wafer to the adhesive;
- removing a portion of the device wafer after securing the device wafer to the transfer wafer;
- etching trenches in the device wafer to form a plurality of chips, wherein etching trenches is performed after removing the portion of the device wafer;
- etching trenches in the transfer substrate to singulate a chip unit, wherein the chip unit comprises:
- a chip of the plurality of chips, and
- a portion of the transfer wafer;
- aligning the chip with a target device after singulating the chip unit, wherein the portion of the transfer wafer is used as a handle to align the chip with the target device;
- bonding the chip to the target device;
- and
- removing a portion of the adhesive to disconnect the portion of the transfer wafer from the chip.
A method for creating a composite semiconductor device, the method comprising:
- securing a first wafer to a transfer wafer;
- securing a second wafer to the transfer wafer;
- removing a portion of first wafer;
- removing a portion of the second wafer;
- etching the first wafer and the second wafer to form a plurality of chips, wherein etching is performed after removing the portion of the first wafer and after removing the portion of the second wafer;
- etching the transfer wafer to singulate a chip unit, wherein the chip unit comprises:
- a chip of the plurality of chips, and
- a portion of the transfer wafer;
- bonding the chip to a target device after singulating the chip unit, wherein the portion of the transfer wafer is used as a handle to align the chip with the target device;
- and
- removing the portion of the transfer wafer from the chip.
Dependencies are inferred from the claim text.