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US 10,312,475 B2Granted
CVD thin film stress control method for display application
AssigneeApplied Materials, Inc.
InventorsTae Kyung Won, Soo Young Choi, Sanjay D. Yadav, Carl A. Sorensen, Chien-Teh Kao, Suhail Anwar, Young Dong Lee
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Abstract
Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.
Claims19
A method of forming a film layer, comprising:
- heating a substrate, disposed on a substrate support in a processing chamber, to a substrate temperature of below about 100° C.;
- flowing a silicon precursor gas and a nitrogen precursor gas into the processing chamber;
- forming a high density plasma of the nitrogen precursor gas and the silicon precursor gas;
- depositing a silicon nitride layer on the substrate;
- and
- controlling a film stress of the deposited silicon nitride layer by biasing the substrate while depositing the silicon nitride layer, wherein biasing the substrate comprises applying a biasing power to an electrode disposed in or on the substrate support, and wherein the applied biasing power is between about 130 millaWatts and about 2300 millaWatts per cm2 of substrate surface area.
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A method of forming a film layer comprising:
- flowing a silicon precursor gas and a nitrogen precursor gas into a processing chamber;
- biasing an electrode coupled to a substrate support disposed in the processing chamber;
- forming a plasma of the nitrogen precursor gas and the silicon precursor gas, wherein the plasma has an electron density of more than about 1011/cm3;
- depositing a silicon nitride layer on a substrate disposed on the substrate support while maintaining a substrate temperature of between about 50° C. and about 150° C.;
- and
- controlling a film stress of the deposited silicon nitride layer by biasing the substrate while depositing the silicon nitride layer, wherein biasing the substrate comprises applying a biasing power to an electrode disposed in or on the substrate support, and wherein the applied biasing power is between about 130 millaWatts and about 2300 millaWatts per cm2 of substrate surface area.
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A method of forming a thin film encapsulation structure, comprising:
- heating a substrate, disposed on a substrate support in a processing chamber, to a temperature of below about 100° C.;
- flowing a silicon precursor gas and a nitrogen precursor gas into the processing chamber;
- forming a plasma of the nitrogen precursor gas and the silicon precursor gas, the plasma having an electron density of more than about 1011/cm3;
- depositing a silicon nitride layer onto the substrate;
- and
- controlling a film stress of the deposited silicon nitride layer by biasing the substrate while depositing the silicon nitride layer, wherein
- biasing the substrate comprises applying a biasing power to an electrode disposed in or on the substrate support,
- the applied biasing power is between about 130 millaWatts and about 2300 millaWatts per cm2 of substrate surface area,
- the film stress of the deposited silicon nitride layer is controlled to less than about 150 MPa of compressive stress, and
- the silicon nitride layer forms a barrier layer of the thin film encapsulation structure, the thin film encapsulation structure comprising a first barrier layer deposited over an OLED device, an organic buffer layer deposited on the first barrier layer, and the silicon nitride layer deposited on the organic buffer layer, the silicon nitride layer forming a second barrier layer having a thickness less than about 2000 Å.
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Dependencies are inferred from the claim text.