Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsDanny Pak-Chum Shum, Desmond Jia Jun Loy, Wen Siang Lew
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Abstract
Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.
Claims18
A non-volatile memory (NVM) device comprising:
- a substrate;
- a first electrode;
- a seed layer positioned between the substrate and the first electrode;
- a second electrode positioned above the first electrode;
- and
- a single variable resistance material layer positioned between the first electrode and the second electrode and having a first surface in direct contact with the first electrode and a second surface in direct contact with the second electrode, wherein the variable resistance material layer contains magnesium oxide.
A resistive random access memory (RRAM) device comprising:
- a substrate;
- a magnesium oxide (MgO) based metal-insulator-metal (MIM) structure overlying the substrate and comprising a first electrode over the substrate, an insulator over the first electrode, and a second electrode over the insulator;
- and
- a seed layer between the substrate and the first electrode.
A method for fabricating a resistive random access memory (RRAM) device comprising:
- forming a first electrode over a substrate;
- forming a magnesium oxide (MgO)-containing insulator layer over the first electrode;
- and
- forming a second electrode over the MgO-containing insulator layer;
- wherein forming the first electrode over the substrate comprises patterning a first mask over the substrate, depositing a first electrode material over the substrate, and removing the first mask and overlying layers from the substrate;
- and
- wherein forming the magnesium oxide (MgO)-containing insulator layer over the first electrode and forming the second electrode over the MgO-containing insulator layer comprises patterning a second mask over the first electrode and the substrate, depositing MgO-containing material over the substrate and the first electrode, depositing a top electrode material over the MgO-containing material, and removing the second mask and overlying layers from the substrate.
Dependencies are inferred from the claim text.