Variable resistance element and memory device

A variable resistance element, comprising:

• a first conductive layer including a first element including at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium;
• a second conductive layer including at least one selected from the group consisting of platinum, gold, iridium, tungsten, palladium, rhodium, titanium nitride, and silicon;
• a first layer contacting the first conductive layer, being provided between the first conductive layer and the second conductive layer, and including a first material, the first material being insulative;
• and
• a second layer including a second element and a second material and being provided between the first layer and the second conductive layer, the second element including at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium, the second material being different from the first material, wherein
• the first layer does not include the second element, or
• the first layer includes the second element, and a concentration of the second element in the second layer is higher than a concentration of the second element in the first layer.

A variable resistance element, comprising:

• a first conductive layer including a first element including at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium;
• a second conductive layer including at least one selected from the group consisting of platinum, gold, iridium, tungsten, palladium, rhodium, titanium nitride, and silicon;
• a first layer contacting the first conductive layer, being provided between the first conductive layer and the second conductive layer, and including a first material, the first material being insulative;
• and
• a second layer including a second element and a second material and being provided between the first layer and the second conductive layer, the second element including at least one selected from the group consisting of silver, copper, aluminum, nickel, and titanium, the second material being different from the first material, wherein
• the second layer includes a first region and a second region, the second region being provided between the first region and the second conductive layer, and
• a concentration of the second element included in the first region is lower than a concentration of the second element included in the second region.