Resistive memory with amorphous silicon filaments

Abstract

A method for manufacturing a semiconductor memory device includes forming a first silicon layer on a bottom conductive layer, transforming the first silicon layer into a first polysilicon layer, forming a second silicon layer stacked on the first polysilicon layer, and a third silicon layer stacked on the second silicon layer, transforming the second and third silicon layers into second and third polysilicon layers, wherein the first and third polysilicon layers have a first doping type, and the second polysilicon layer has a second doping type different from the first doping type, forming an amorphous silicon layer on the third polysilicon layer, and forming a top conductive layer on the amorphous silicon layer.

Dependencies are inferred from the claim text.