Memory devices including phase change material elements
AssigneeOvonyx Memory Technology, LLC
InventorJun Liu
Life of this patent
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Abstract
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.
Claims12
A memory device, comprising:
- memory cells, at least one memory cell of the memory cells comprising a phase change material element over a first electrode, each phase change material element comprising a programmable volume having an interface with the first electrode at a single location, and the programmable volumes of adjacent phase change material elements disposed at opposite ends of the memory cells.
A memory device, comprising:
- memory cells, at least one memory cell of the memory cells comprising a phase change material element over an electrode, each phase change material element comprising a programmable volume and the programmable volumes of adjacent phase change material elements vertically staggered relative to one another.
A method of forming a memory device, the method comprising:
- forming memory cells, at least one memory cell of the memory cells comprising a phase change material element over a first electrode, each phase change material element comprising a programmable volume having an interface with the first electrode at a single location, and the programmable volumes of adjacent phase change material elements disposed at opposite ends of the memory cells.
A method of forming a memory device, the method comprising:
- forming memory cells, at least one memory cell of the memory cells comprising a phase change material element over an electrode, each phase change material element comprising a programmable volume and the programmable volumes of adjacent phase change material elements vertically staggered relative to one another.
Dependencies are inferred from the claim text.