Selective deposition and nitridization of bottom electrode metal for MRAM applications

A method for forming a semiconductor structure, the method comprising:

• depositing an insulating layer over a semiconductor substrate;
• etching the insulating layer to form trenches for receiving a metal;
• depositing one or more sacrificial layers;
• etching portions of the one or more sacrificial layers to expose a top surface of the metal of one or more of the trenches;
• selectively recessing the exposed metal of one or more of the trenches;
• selectively depositing an electrode within the recessed portion of the exposed metal;
• nitridizing the electrode to form a nitride cap over the electrode;
• forming a magnetic tunnel junction in direct contact with a portion of a top surface of the nitride cap;
• and
• forming a first dielectric cap over exposed portions of the top surface of the nitride cap, the first dielectric cap in direct contact with sidewalls of the nitride cap and the electrode.